Raad B, Nigam K, Sharma D, Kondekar P (2016) Dielectric and work function engineered TFET for ambipolar suppression and RF performance enhancement. In: Proceedings of 3rd IEEE international conference on devices for integrated circuit, DevIC, pp 461–4 Sahoo S, Dash S, Mishra GP (2019) Work-function modulated hetero gate charge plasma TFET to enhance the device performance. Kumar N, Raman A (2019) Design and investigation of charge plasma based WF engineered dual-metal-heterogeneous gate S i − S i 0.55 G e 0.45 GAA- cylindrical NWTFET for ambipolar analysis. Nature 479:329–37ĭamrongplasit N, Kim SH, Liu TJK (2013) Study of random dopant fluctuation induced variability in the raised-ge-source TFET. Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy-efficient electronic switches. Seabaugh AC, Zhang Q (2010) Low-voltage tunnel transistors for beyond CMOS logic. Furthermore, we also investigate the analog/RF and linearity parameters of the HJ HD DLTFET to demonstrate its competence in low-power analog, radio frequency (RF), sensors, and linear applications. The numerical simulations illustrates higher I O N, I O N/ I O F F ratio and improved average sub-threshold swing ( S S a v g) for HJ HD DLTFET in comparison to conventional DLTFET. G e as channel and source material and S i 0.6 G e 0.4 for drain as it is a high bandgap material relative to Ge, along with T i O 2 as a high- κ gate dielectric and drain voltage of 0.3 V. This manuscript investigates, for the first time, a DLTFET which employs a heterojunction of low bandgap material. In CP-concept, source and drain regions are generated by applying work function for respective electrodes without performing chemical doping. So, in this manuscript, we investigate a CP-based dopingless TFET (DLTFET) with source and channel made up of Germanium, S i 0.6 G e 0.4 drain and T i O 2 as gate-dielectric using simulations for low power analog/RF and linear applications and abbreviated as HJ HD DLTFET where HJ stands for heterojunction, HD represents high- κ dielectric. Tunnel FET (TFET) based upon charged-plasma (CP) concept have came out as a potential Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) replacement as it provides immunization towards short channel effects (SCEs) and random dopant fluctuations (RDFs), along with providing inherent benefits of conventional TFETs such as low off-state current ( I O F F) and sub-60 mV/dec subthreshold swing.
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